Silicon on Insulator
Thick Film Fusion Bonding
| All Diameters: |
3” through 200mm:
Single- or Double Side Polished
CZ and FZ |
| |
| Device Layer: |
Flatness <1µm <2µm <5µm |
| Buried Thermal Oxide: |
0,2µm to 2,4µm |
| Handle: |
Flatness <1µm up
Any Typ, Orientation, Res.
Thickness 300µm to 2000µm |
| © Siltronic AG 2010 |
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