Thin Films & Oxides

Si-Mat can provide all of your wafer film requirements. For special requests, please feel free to contact us at any time.

Oxide:

  • Wet and Dry Thermal Oxidation
  • Low Temperature Oxide (LTO)
  • Thick Oxide
  • PETEOS (Plasma Enhanced Tetraethylorthosilicate)

 

Oxide Specifications

  • Thickness range: 200 Å – 15 µm
  • Thickness tolerance: Target +/- 5 %
  • Within wafer uniformity: +/- 3 % or better
  • Wafer to wafer uniformity: >+/- 5 % or better
  • Sides processed: Both
  • Refractive index: 1.456
  • Film stress: -320 MPa (Compressive)
  • Wafer size: 50.8mm, 76.2mm, 100mm, 125mm, 150mm, 200mm, 300mm
  • Wafer thickness: 70µm – 2000µm
  • Wafer material: Silicon, Silicon on Insulator, Quartz
  • Temperature: 950 C° – 1050 C°
  • Gases: Steam
  • Equipment: Horizontal Furnace

LPCVD Nitride:

Stoichiometric LPCVD Nitride Process

Nitride Specifications

  • Thickness range: 100 Å – 4500 Å
  • Sides processed: Both
  • Refractive index: 2.00 +/-.05 @632nm
  • Film stress: >800 MPa Tensile Stress
  • Wafer size: 50.8 mm – 200 mm
  • Temperature: 800 C°
  • Gases: Dichlorosilane, Ammonia
  • Equipment: Horizontal vacuum furnace

 

LOW STRESS LPCVD NITRIDE

Specifications

  • Thickness range: 50 Å – 2 µm
  • Thickness tolerance: +/- 5 %
  • Within wafer uniformity: +/- 5 % or better
  • Wafer to wafer uniformity: +/- 5 % or better
  • Sides processed: both
  • Refractive index: 2.20 +/- .02
  • Film stress: <250 MPa Tensile Stress
  • Wafer size: 76.2mm, 100mm, 125mm, 150mm, 200mm
  • Wafer thickness: 100 µm – 2000 µm
  • Wafer material: Silicon, Silicon on Insulator, Quartz
  • Temperature: 820 C°
  • Gases: Dichlorosilane, Ammonia
  • Equipment: Horizontal vacuum furnace

 

SUPER LOW STRESS LPCVD NITRIDE

Specifications

  • Thickness range: 50 Å – 2 µm
  • Thickness tolerance: +/- 5 %
  • Within wafer uniformity: +/- 5 % or better
  • Wafer to wafer uniformity: +/- 5 % or better
  • Sides processed: both
  • Refractive index: 2.30 +/- .05
  • Film stress: <100 MPa Tensile Stress
  • Wafer size: 76.2mm, 100mm, 125mm, 150mm, 200mm
  • Wafer thickness: 100 µm – 2000 µm
  • Wafer material: Silicon, Silicon on Insulator, Quartz
  • Temperature: 820 C°
  • Gases: Dichlorosilane, Ammonia
  • Equipment: Horizontal vacuum furnace

Standard and Low Stress PECVD Nitride Films

Specifications

  • Thickness range: 100 Å – 2 µm
  • Thickness tolerance: +/- 7 %
  • Within wafer uniformity: +/- 7 % or better
  • Wafer to wafer uniformity: +/- 7 % or better
  • Sides processed: One
  • Refractive index: 1.98+/-.05
  • Film stress: <200 MPa(Low Stress), +400 MPa (Standard)
  • Wafer size: 76.2mm, 100mm, 125mm, 150mm, 200mm, 300mm
  • Wafer thickness: 100 µm – 2000 µm
  • Wafer material: Silicon, Silicon on Insulator, Quartz
  • Temperature: 300 C° – 400 C°
  • Gases: Silane, Ammonia, Nitrogen
  • Equipment: PlasmaTherm batch PECVD deposition tool

 

Our Most Popular Sputtered Films:

Our Most Popular Sputtered Films Include:

  • Titanium
  • Chrome
  • Aluminum
  • Aluminum Copper
  • Aluminum Silicon
  • Copper
  • Nickel
  • Tantalum
  • Tungsten
  • Silicon

 

Specifications

    • Thickness range: 100 Å – 1.5 µm depending on metal
    • Thickness tolerance: +/- 10 %
    • Sides processed: One
    • Wafer size: 76.2 mm – 300 mm
    • Gases: Argon, Nitrogen
    • Equipment: Sputter deposition tool
  • PVD, CVD, and Electro-plated
  • Ta, TaN, Ti, TiN, TiW, W, WN,
  • Cu, Al, Al-Cu, Al-Si-Cu
  • Precious Metals