SOI Wafers

Silicon on Insulator

Thick Film Fusion Bonding

All Diameters:

  • 3” through 200 mm:
  • Single- or Double Side Polished
  • CZ and FZ

Device Layer: Flatness <1 µm <2 µm <5 µm

Buried Thermal Oxide: 0,2µm to 2,4µm

Handle:

  • Flatness <1µm up
  • Any Typ, Orientation, Res.

Thickness: 300µm to 2000µm

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