Silicon on Insulator

SOI Wafers
Thick Film Fusion Bonding
All Diameters:
- 3” through 200 mm:
- Single- or Double Side Polished
- CZ and FZ
Device Layer: Flatness <1 µm <2 µm <5 µm
Buried Thermal Oxide: 0,2µm to 2,4µm
Handle:
- Flatness <1µm up
- Any Typ, Orientation, Res.
Thickness: 300µm to 2000µm